Ceramics Base PCB

Ceramics Base PCB
Details:
Ceramic base PCB are a special type of printed circuit board that use ceramic materials as the base and are coated with a metal conductive layer (usually copper or aluminum) on the surface.
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Ceramic base PCB are a special type of printed circuit board that use ceramic materials as the base and are coated with a metal conductive layer (usually copper or aluminum) on the surface. They are mainly used to support high-power and high-frequency electronic components. By combining the excellent thermal conductivity, electrical insulation, and high-temperature resistance of ceramics with the good electrical conductivity of the metal layer, ceramic substrates have become core components in high-end electronic equipment such as new energy vehicles, photovoltaic inverters, 5G base stations, and high-power semiconductor modules.
The types of ceramic substrates can be classified from two main perspectives: materials and manufacturing processes.

 

Designator Code Part Number Manufacturer Quantity      
C1, C4, C20, C182, C191 NP0-0402-50 V-100 pF±5 %     5 250 500  
C2, C92, C99, C100, C101, C102, C103, C104 X5R-0402-50 V-220 nF+-10 %     8 400    
C3, C6, C7, C8, C11, C24, C25, C26, C27, C28, C30, C31, C34, C37, C47, C51, C52, C53, C54, C55, C68, C69, C70, C71, C79, C80, C84, C93, C94, C95, C96, C97, C98, C107, C108, C110, C112, C114, C115, C123, C124, C127, C130, C135, C138, C140, C142, C145, C152, C153, C154, C155, C156, C157, C158, C159, C160, C161, C166, C168, C171, C173, C181, C184, C185, C186, C187, C188, C189, C190 X7R-0402-50 V-100 nF+-10 %     70 3500 7000  
C5, C9, C10, C91 X7R-0402-50 V-1 nF+-10 %     4 200 400  
C21, C22, C23 X7R-0402-25 V-1 µF+-10 % GRM155R61E105KA12D   3 450 300  
C29, C42 X7R-0402-50 V-220 pF+-10 %     2 300 800 200
C32, C33, C35, C36 X5R-0201-10 V-100 nF+-10%     4 200 400 -20%
C38, C39, C40, C41, C46, C56 X7R-0402-6,3 V-1 µF+-10 %     6 300 600  
C43, C44, C45, C63 X5R-0805-6,3 V-47 µF±20 %     4 200 400  
C48, C49, C50, C67 X5R-0603-10 V-22 µF+-10 %     4 200 400 -20%
C57, C58, C59, C167 NP0-0402-50 V-22 pF±5 %     4 200 400  
C60, C61, C62, C64, C65, C66, C169, C170, C183 X5R-0603-6,3 V-22 µF±20 %     9 450 900  
C72, C73, C74, C172, C175 X7R-0402-50 V-10 nF+-10 %     5 250 500  
C75, C76, C77, C78 X7R-1206-50 V-10 µF+-10 %     4 200 400  
C81, C90 X7R-0402-50 V-22 nF+-10 %     2 300 200  
C82, C83, C163, C164, C178, C179 X6S-0402-16 V-1 µF+-10 %     6 300 600  
C85 X5R-0402-6,3 V-4,7 µF+-20 %     1 150 100  
C86 NP0-0603-50 V-47 pF+-5 %     1 150 100  
C87, C88, C89 X7R-1210-10 V-47 µF+-10 %     3 150 300  
C105, C106, C109, C111, C149, C150 NP0-0402-50 V-33 pF±5 %     6 300 600  
C113, C116, C117, C118, C119, C120, C121, C122, C125, C126, C128, C129, C131, C132, C133, C134, C136, C137, C139, C141, C143, C144, C146, C162, C165, C180 X5R-0402-6,3 V-10 µF+-20 %     26 1300 2600  
C147   10TPB220M Panasonic 1 100    
C148 X5R-1210-16 V-100 µF±20 %     1 50 100  
C151 X7R-0805-16 V-2,2 µF+-10 %     1 150 100  
C174 X7R-1210-50 V-4,7 µF+-10 %     1 50 100  
C176, C177   EEEFK1H470XP Panasonic 2 200    
C192 NP0-0402-50 V-220 pF+-5 %     1 150 100  
DA1, DA2, DA3   SGM2576YN5G/TR SGMicro 3 300    
DA4, DA5, DA6, DA10   SY98003AQNC Silergy 4 400    
DA7, DA8   LD39050PUR STMicroelectronics 2 200    
DA9   MPQ4316GRE-AEC1 MPS 1 100    
DA11   LM74800QDRRRQ1 Texas Instruments 1 100    
DA12   SY8089AAC Silergy 1 100    
DA13   LP5907MFX-1.2/NOPB Texas Instruments 1 100    
DD1   2N7001TDPWR Texas Instruments 1 100    
DD2   FUSB302BMPX Onsemi 1 100    
DD3   MCP2542FDT-H/MF Microchip Technology 1 100    
DD4   XS9922B Chipup 1 100    
DD6   MS1836S Macrosilicon 1 100    
DD7   PCA9617ADPJ Nexperia 1 100    
FB1, FB14   BLM18PG121SN1D Murata 2 100 200  
FB2, FB3   BLM18KG121TN1 Murata 2 100 200  
FB4, FB5, FB6, FB7, FB8, FB9, FB10   BLM18EG601SN1D Murata 7 350 700  
FB11   FBMH1608HM101-T Taiyo 1 50 100  
L1   SPM5030T-4R7M-HZ Vishay 1 50 100  
L2   LQM2HPN2R2MGSL Murata 1 50 100  
MP1, MP2, MP3, MP4   9774020633R WE 4 400    
MP5, MP6, MP7, MP8   9774050243R WE 4 400    
R1, R3, R26, R126 0402-100 Ω+-1 %     4 200 400  
R2, R4, R5, R6, R12, R13, R15, R46, R105, R146, R151, R153, R161, R168, R177, R178, R185, R186, R187, R188, R189, R190, R191, R192, R196, R197, R198, R199, R202, R205, R214, R215, R216, R217, R218, R219, R220, R221, R222, R223, R224 0402-0 Ω+-5 %     41 2050 4100  
R7 0402-12 Ω+-1 %     1 150 100  
R8, R16, R38, R50, R61, R70, R71, R109 0402-1 kΩ+-1 %     8 400 800  
R9 0603-1 kΩ+-1 %     1 150 100  
R10, R179, R180, R181 0603-1,5 kΩ+-1 %     4 200 400  
R17, R36, R37, R47, R58, R62, R66, R72, R73, R83, R111, R112, R204, R227 0402-10 kΩ+-1 %     14 700 1400  
R22, R24, R48, R85, R86, R88, R99, R106, R107, R121, R122, R125, R127, R128, R129, R130, R131 0402-100 kΩ+-1 %     17 850 1700  
R25, R59, R90, R108, R123 0402-20 kΩ+-1%     5 250 500  
R27, R28, R30, R31, R32, R33, R34, R35 0402-590 Ω+-1 %     8 400 800  
R29 0402-27 kΩ+-1 %     1 150 100  
R39, R40 0402-1,8 kΩ+-1 %     2 300 200  
R41, R42, R43 0402-47 kΩ+-1 %     3 450 300  
R44 0402-1,2 kΩ+-1 %     1 150 100  
R45 0603-120 Ω+-5 %     1 150 100  
R49 0402-8,2 kΩ+-1 %     1 150 100  
R52, R94, R95, R113, R120 0603-0 Ω+-5 %     5 250 500  
R56, R57 0603-5,1 kΩ+-1 %     2 300 200  
R60, R63, R64, R65 0402-2,2 Ω+-1 %     4 200 400  
R67, R82, R91, R124 0402-2,2 kΩ+-1%     4 200 400  
R68, R69, R76, R77, R78, R79, R80, R81, R92, R93, R132 0402-100 kΩ+-5 %     11 550 1100  
R74, R75, R84, R133, R138, R139, R140, R141, R149, R150, R167, R172, R174, R176, R183, R184, R193, R194, R195, R229, R230 0402-4,7 kΩ+-1 %     21 1050 2100  
R87 0402-31,6 kΩ+-1 %     1 150 100  
R89 0402-120 kΩ+-1 %     1 150 100  
R96 0402-4,3 kΩ+-1 %     1 150 100  
R97 0402-75 kΩ+-1 %     1 150 100  
R98 0402-51 kΩ+-1 %     1 150 100  
R100, R102 0402-39 kΩ+-1 %     2 300 200  
R101 0402-15 kΩ+-1 %     1 150 100  
R103 0402-30 kΩ+-1 %     1 150 100  
R110 0402-330 Ω+-1 %     1 150 100  
R115, R116 0603-1,8 kΩ+-1 %     2 300 200  
R119, R147 0402-75 Ω+-1 %     2 300 200  
R135, R136 0402-0 Ω+-1 %     2 300 200  
R148 0402-10 Ω+-1 %     1 150 100  
R152 0402-22 Ω+-1 %     1 150 100  
R154 0402-1 MΩ+-1 %     1 150 100  
R160 0402-4,02 kΩ+-1 %     1 150 100  
R169, R170 0805-0,033 Ω+-1 %     2 300 200  
R182 0402-1 kΩ+-5 %     1 150 100  
SB1, SB2   B3U-3000P Omron 2 200    
VD1, VD17   ESD5Z2.5T1G ON Semiconductor 2 200    
VD2   SMBJ40CA-TR STMicroelectronics 1 100    
VD3, VD10, VD19   GNL-0603GC G-nor 3 300    
VD4, VD18   GNL-0603EC G-nor 2 200    
VD5, VD8   MBR0540 Hottech 2 200    
VD6, VD7, VD12, VD13   ESD73034D Tech Public 4 400    
VD9   SMF05C.TCT Semtech 1 100    
VD14, VD16, VD21   PRTR5V0U2AX,215 Nexperia 3 300    
VD20   GNL-0603UYOC G-nor 1 100    
VT1, VT3, VT4, VT5, VT7   2N7002DW Hottech 5 500    
VT2, VT6   WNM6002-3/TR Willsemi 2 200    
VT8, VT9   WMQ30N06TS Wayon 2      
VT10   IRLML2502 UMW 1 100    
XP1, XP2, XP3, XP4, XP7, XP12, XP13, XP14, XP15   SM03B-SRSS-TB JST 9 900    
XP5, XP11   SM04B-SRSS-TB JST 2 200    
XP6, XP10   SM05B-SRSS-TB JST 2 200    
XP8, XP9   SM06B-SRSS-TB JST 2 200    
XS2, XS3, XS4, XS5   AXK5F80547YG Panasonic 4 400    
XS6   10118241-001RLF Amphenol 1 100    
XS8, XS9   1054500101 Molex 2 200    
XS11   1759503-1 TE Connectivity 1 100    
XS12   5034802400 Molex 1 100    
XS13   245804030000829+ Kyocera AVX 1 100    
ZQ1, ZQ2   X322527MOB4SI YXC 2 200    

 

Classification by Ceramic Material

 

 

This is the most fundamental classification method, as different materials determine the key performance characteristics of the substrate.

Alumina (Al₂O₃) substrates

Currently the most widely used ceramic substrate material in the electronics industry. They offer excellent overall performance, high mechanical strength, good chemical stability, abundant raw materials, and relatively low cost. They are widely applied in microelectronics, power electronics, and hybrid microelectronics.

Aluminum nitride (AlN) substrates

Characterized by extremely high thermal conductivity (typically ≥170 W/(m·K)) and a coefficient of thermal expansion well matched to silicon chips, making them an ideal choice for high-performance thermal management applications. However, they require very high material purity and strict process control.

Silicon nitride (Si₃N₄) substrates

Although mentioned without detailed explanation in the source material, they are generally known for their excellent mechanical strength and thermal shock resistance, making them suitable for applications with high reliability requirements.

Beryllium oxide (BeO) substrates

Possess thermal conductivity even higher than that of metallic aluminum, but their application is strictly limited due to the toxicity of the material.

 

Classification by Manufacturing Process

 

 

Different manufacturing processes determine the structure, performance, and cost of the substrate, and are key factors in distinguishing product types.

HTCC (High-Temperature Co-Fired Ceramic)

Sintered at high temperatures of 1300–1600 °C, using high-melting-point metals such as tungsten and molybdenum as conductors. The process is mature, but the cost is relatively high and the electrical conductivity of the metal layers is relatively poor.

01

LTCC (Low-Temperature Co-Fired Ceramic)

Sintered at 850–900 °C, allowing the use of metals with better electrical conductivity such as silver, gold, and copper. It can realize complex multilayer structures and is suitable for high-frequency and highly integrated modules.

02

DBC (Direct Bonded Copper)

Copper foil is directly bonded to the ceramic substrate through a high-temperature eutectic process. It features low thermal resistance, high current-carrying capacity, and high reliability, making it one of the most mainstream ceramic substrates for high-power devices today.

03

DPC (Direct Plated Copper)

Uses thin-film process technology to directly electroplate copper on the surface of the ceramic substrate to form circuit patterns. It enables high precision and fine line widths and has developed rapidly in recent years, becoming a widely applied technology.

04

LAM (Laser Activated Metallization)

Uses laser technology to form fine metal circuits on the ceramic surface, making it suitable for high-precision and miniaturized devices.

05

 

Ceramics base PCB have the following main Features:

 

Feature

 

 

High thermal conductivity

Ceramic substrates have relatively high thermal conductivity. For instance, the thermal conductivity of an alumina ceramic substrate is 25–35 W/(m·K), while that of an aluminum nitride ceramic substrate can reach 170–230 W/(m·K). This high thermal conductivity gives ceramic substrates excellent heat dissipation performance, making them particularly suitable for high-power electronic devices.

High mechanical strength and stability

Ceramic substrates have high strength and hardness and can maintain stability in harsh environments. Their coefficient of thermal expansion is close to that of silicon, which simplifies the manufacturing process of power modules. In addition, ceramic substrates perform well under severe temperature fluctuations and demonstrate reliable thermal cycling performance, with cycle counts reaching up to 50,000.

Excellent insulation performance

Ceramic substrates exhibit excellent insulation performance and are suitable for applications that require high dielectric strength. They have a low dielectric constant and good high-frequency characteristics, making them well suited for high-frequency circuits.

Excellent chemical stability

Ceramic substrates exhibit outstanding chemical stability and can maintain superior performance in high-temperature oxidative or corrosive environments. They are not easily corroded.

 

Structure

 

 

The basic structure of a ceramic substrate typically consists of a ceramic base material, a metal layer, and an adhesive layer. Specifically, a ceramic substrate refers to a specially processed board in which copper foil is directly bonded to the surface of an alumina (Al₂O₃) or aluminum nitride (AlN) ceramic substrate at high temperatures. This ultra-thin composite substrate features excellent electrical insulation, high thermal conductivity, superior solderability, and strong adhesion. Moreover, it can be etched into various patterns like a conventional PCB and offers high current-carrying capacity.

 

Detailed Structures of Different Types of Ceramic Substrates

High-Temperature Co-Fired Ceramic (HTCC)

The production cost of this type of substrate is relatively high, and its thermal conductivity generally ranges from 20 to 200 W/(m·K), depending on the composition and purity of the ceramic powder.

01

Low-Temperature Co-Fired Ceramic (LTCC)

Low-melting-point glass materials are added to alumina powder, allowing the use of highly conductive metals such as gold and silver as electrode and wiring materials.

02

Thick-Film Printed Ceramic Substrate (TPC)

This type of substrate is fabricated using a screen-printing process and features a simple manufacturing procedure. It is suitable for packaging electronic devices with low requirements for circuit accuracy, such as automotive electronic modules.

03

Direct Bonded Copper (DBC) Ceramic Substrate

Under high-temperature conditions, copper foil and the ceramic substrate are firmly bonded through a eutectic bonding process, resulting in high bonding strength and excellent thermal conductivity. It is widely used for heat dissipation in devices such as insulated gate bipolar transistors (IGBTs) and laser components.

04

Active Metal Brazing (AMB) Ceramic Substrate

This type of substrate achieves bonding between the ceramic substrate and copper foil through solder containing active or rare-earth elements. It offers high bonding strength and reliability and is suitable for high-density packaging applications.

05

 

Application

 

 

1. In the electronics field, ceramic substrates are ideal carriers for electronic components such as integrated circuits, power modules, and RF devices. With high strength, high hardness, high wear resistance, excellent insulation performance, and thermal stability, they ensure stable operation and efficient signal transmission in electronic equipment. Applications of ceramic substrates include, but are not limited to, high-power semiconductor modules, power control circuits, high-frequency switching power supplies, solid-state relays, automotive electronics, aerospace and military electronic components, and solar panel assemblies.
2. In the communications field, ceramic substrates can be fabricated into components such as microwave filters, antennas, power dividers, couplers, and isolators. These components play a crucial role in communication systems, offering excellent mechanical strength and thermal conductivity.
3. In the optics field, ceramic substrates are used as bases for lasers, providing good thermal conductivity and mechanical strength. They are also used to manufacture various components for fiber-optic communications, such as wavelength division multiplexers and polarization controllers.
4. In the medical field, ceramic substrates are widely used in high-end medical devices, including biomedical sensors and artificial organs, due to their excellent biocompatibility and chemical stability. For example, ceramic substrates can be used to manufacture artificial joints and dental restoration materials, offering good biocompatibility and aesthetic properties.
5. In the aerospace field, ceramic substrates are used to manufacture engine components, thermal barrier coatings, combustion chamber linings, and spacecraft parts. With high strength, radiation resistance, and high-temperature resistance, they provide reliable support in extreme environments, ensuring stable system operation under high-speed, high-temperature, and high-radiation conditions.
6. Our company's ceramic substrate products include multilayer ceramic PCBs and 5G PCB antennas.

 

Customized product

 

 

Most of our products are customized based on the original Gerber files provided by our customers.
After receiving the original Gerber files, we convert them into working Gerber files for production use.
During this conversion process, we adjust certain parameters-such as hole diameter, trace width, and trace spacing-to optimize manufacturability and ensure smooth production.

 

Package and warranty

 

 

All our products are vacuum-packaged with desiccant to ensure optimal protection during storage and transportation.
The shelf life of vacuum-packaged circuit boards varies depending on the surface treatment process, typically ranging from 3 to 12 months. The details are as follows:

Shelf Life for Different Surface Treatment Processes

 

ENIG (Electroless Nickel Immersion Gold)

Can be stored for up to 12 months under vacuum packaging with desiccant protection.

 
 

Lead-Free HASL (Hot Air Solder Leveling)

When no special storage adjustments are made, the shelf life is typically about 3 months.

 
 

OSP (Organic Solderability Preservative)

Has a shelf life of 3–6 months under vacuum packaging with desiccant protection. However, if stored improperly (e.g., without desiccant or with insufficient vacuum sealing), the shelf life may shorten to around 3 months.

 
 

Immersion Gold (Chemical Gold Plating)

Shelf life can reach 6–12 months, provided that sealed packaging and desiccant are used.

 

 

Company advantage

 

 

1. We guarantee a response within 24 hours to all customer inquiries and complaints.
2. Our factory offers 1-day sample production for 2-layer boards and provides rapid manufacturing services for small and medium orders, ensuring short lead times and on-time delivery.
3. We support multiple payment options, including EUR, USD, RUB, and CNY, through PayPal, T/T, and other convenient methods.

 

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